收藏本站
Si4320
Low Power Duty-Cycle Operation (LPDM)
To use this mode, pin 8 must be connected to VDD. The logic value of pin 8 defines whether the receiver works in Low Power Duty-Cycle
Mode (LPDM) or not. If the value is high (VDD detected), the chip will wake up in every 300 ms. If the value is low (GND detected), then the
chip is continually ON (active). The chip uses the internal wake-up timer and counter for timing the on/off process. This method reduces the
overall current consumption, which should permit approximately 6 months operation from a 1500 mAh battery.
Low Power Duty-Cycle Internal Operations and Timings (Wake-up on Radio)
The wake-up timer event switches on the crystal oscillator, the internal logic waits about 2.25ms. When the oscillator is stable the controller
switches on the synthesizer as well. The receiver monitors the incoming signal strength during this “ON” state of LPDM. If in the next 6ms the
incoming signal strength is above the defined limit (-103dBm if FCS0=0 or -97dBm if FCS0=1), the synthesizer remains switched on for
30.5ms, otherwise it switches itself off after the 6ms operation time. The period time is about 300ms.
Xtal osc.
enable
Synthesizer
enable
DRSSI
Pattern
recognition
2.25ms
8.25ms
300ms
30.5ms
300ms
30.5ms
300ms
Active
Synchron word (2DD4h) received
Start of new cycle
Note 1:
Note 2:
Every detected synchron word restarts the timer, which controls the ‘ON’ state of the receiver.
If the internal Pattern Recognition block is active (decoding the synchron word), then the internal logic does not switch the
synthesizer off until the incoming data is fully processed.
RX-TX ALIGNMENT PROCEDURES
RX-TX frequency offset can be caused only by the differences in the actual reference frequency. To minimize these errors it is suggested to
use the same crystal type and the same PCB layout for the crystal placement on the RX and TX PCBs.
To verify the possible RX-TX offset it is suggested to measure the CLK output of both chips with a high level of accuracy. Do not measure the
output at the XTL pin since the measurement process itself will change the reference frequency. Since the carrier frequencies are derived
from the reference frequency, having identical reference frequencies and nominal frequency settings at the TX and RX side there should be
no offset if the CLK signals have identical frequencies.
It is possible to monitor the actual RX-TX offset using the AFC status report included in the status byte of the receiver. By reading out the
status byte from the receiver, the actual measured offset frequency will be reported. In order to get accurate values the AFC has to be
disabled during the read by clearing the "en" bit in the AFC Control Command (bit 0).
22
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI4322-A0-FT IC RX FSK UNI 868/915MHZ 16TSSOP
SI4324DY-T1-GE3 MOSFET N-CH D-S 30V 8-SOIC
SI4330-B1-FM IC RCVR ISM 960MHZ 3.6V 20-QFN
SI4354DY-T1-GE3 MOSFET N-CH D-S 30V 8-SOIC
SI4355-B1A-FM IC EZRADIO FM RECEIVER SI4355
SI4388DY-T1-GE3 MOSFET DUAL N-CH 30V 8-SOIC
SI4390DY-T1-GE3 MOSFET N-CH 30V 8.5A 8SOIC
SI4396DY-T1-GE3 MOSFET N-CH D-S 30V 8-SOIC
相关代理商/技术参数
SI4320-J1-FTR 功能描述:射频接收器 Receiver (EZRadio) RoHS:否 制造商:Skyworks Solutions, Inc. 类型:GPS Receiver 封装 / 箱体:QFN-24 工作频率:4.092 MHz 工作电源电压:3.3 V 封装:Reel
Si4322-A0-FT 功能描述:射频接收器 Receivers - IA4322 RoHS:否 制造商:Skyworks Solutions, Inc. 类型:GPS Receiver 封装 / 箱体:QFN-24 工作频率:4.092 MHz 工作电源电压:3.3 V 封装:Reel
SI4322-A0-FTR 功能描述:射频接收器 Receiver (EZRadio) RoHS:否 制造商:Skyworks Solutions, Inc. 类型:GPS Receiver 封装 / 箱体:QFN-24 工作频率:4.092 MHz 工作电源电压:3.3 V 封装:Reel
Si4322-A1-FT 功能描述:射频接收器 RECEIVER EZRadio UNIVRSL ISM BAND FSK RoHS:否 制造商:Skyworks Solutions, Inc. 类型:GPS Receiver 封装 / 箱体:QFN-24 工作频率:4.092 MHz 工作电源电压:3.3 V 封装:Reel
SI4322DY-T1-E3 功能描述:MOSFET 30V 18A 5.4W 8.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4322DY-T1-GE3 功能描述:MOSFET 30V 18A 5.4W 8.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4324DY-T1-E3 功能描述:MOSFET 30V 36A 7.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4324DY-T1-GE3 功能描述:MOSFET 30V 36A 7.8W 3.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube